ChemicalBook CAS DataBase List Ruthenium

Ruthenium synthesis

6synthesis methods

Product Name:Ruthenium
CAS Number:7440-18-8
Molecular formula:Ru
Molecular Weight:101.07

Elemental ruthenium occurs in native alloys of iridium and osmium (irridosmine, siskerite) and in sulfide and other ores (pentlandite, laurite, etc.) in very small quantities that are commercially recovered.
The element is separated from the other platinum metals by a sequence involving treatment with aqua regia (separation of insoluble osmium, rhodium, ruthenium, and iridium), fusion with sodium bisulfate (with which rhodium reacts), and fusion with sodium peroxide (dissolution of osmium and ruthenium). The resulting solution of ruthenate and osmate is treated with ethanol to precipitate ruthenium dioxide. The ruthenium dioxide is purified by treatment with hydrochloric acid and chlorine and reduced with hydrogen gas to pure metal.
Ruthenium is recovered from exhausted catalytic converters or, in a similar manner, from the waste produced during platinum and nickel ore processing.

Ruthenium, [(1,2,3,4,5,6-η)-methylbenzene][(1,2,4,5-η)-1-methyl-1,4-cyclohexadiene]-

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Yield:-

Reaction Conditions:

at 150 - 250; under 0.5 Torr;

Steps:

Ru(l-methyl-cyclohexa-l,4-diene)(toluene) is a light yellow precursor which is liquid at 2O⁰C. Pure ruthenium films were deposited from temperatures above 150⁰C using (1- methyl-cyclohexa-l,4-diene)(toluene) ruthenium. The liquid precursor was stored in a bubbler and the vapors were delivered to a hot-wall reactor by a bubbling method. An inert gas, helium in this case, was used as a carrier gas, as well as for dilution purpose. Tests were done with and without hydrogen as co-reactant, in CVD and ALD modes.With the conditions of our set-up, films were deposited from 15O⁰C, at 0.5 Torr, and the deposition rate reached a plateau at 250⁰C. Depositions were done on silicon oxide, which served as a representative of oxide materials (gate dielectrics, capacitors...) in order to validate the use of the ruthenium precursor as a viable mean for ruthenium films to be used for metal electrode (Figure 1) (MIM, DRAM, gate electrode,...).

References:

WO2008/78296,2008,A1 Location in patent:Page/Page column 11-12