| Identification | Back Directory | [Name]
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) | [CAS]
220797-16-0 | [Synonyms]
TFB AldrichCPR
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) | [Molecular Formula]
(C51H61N)n | [MOL File]
220797-16-0.mol | [Molecular Weight]
690.053 |
| Hazard Information | Back Directory | [Description]
Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1. | [Uses]
TFB can be used for a variety of optoelectronic applications such as organic light emitting diodes (OLEDs), quantum dot displays (QDs) and solar cells. | [Uses]
TFB can be used in the formation of multilayer quantum dot-based light-emitting diodes (LEDs). It can also be used in the fabrication of highly responsive gas sensors for breath analysis. | [General Description]
TFB, a hole transporting material and an electron-blocking layer, has high hole mobility, low electron affinity, and high ionic potential. Its electron blocking nature results in effective confinement of injected charge carriers in the perovskite layers. |
| Questions And Answer | Back Directory | [Classification]
Hole transport material (HTL), Hole injection material (HIL), Electron blocking material (EBL), OLEDs, Perovskite solar cells, Organic and printed electronics. | [Applications]
Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1.
Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoOx for example).
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