SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
| SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) Basic information More.. |
Product Name: | SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) | Synonyms: | SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) | CAS: | | MF: | O2Si | MW: | 60.0843 | EINECS: | | Mol File: | Mol File | ![SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)](/StructureFile/ChemBookStructure22/GIF/CB0660183.gif) |
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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
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