INDIUM NITRIDE

INDIUM NITRIDE 구조식 이미지
카스 번호:
25617-98-5
상품명:
INDIUM NITRIDE
동의어(영문):
INDIUM NITRIDE;Nitriloindium(III);Indium mononitride;indiumnitride(inn);azanylidyneindigane;INDIUM(III) NITRIDE;IndiuM nitride (III);INDIUM(III) NITRIDE, 99.9%;INDIUM NITRIDE ISO 9001:2015 REACH;Indium nitride, 99.8% (metals basis)
CBNumber:
CB5665547
분자식:
InN
포뮬러 무게:
128.82
MOL 파일:
25617-98-5.mol

INDIUM NITRIDE 속성

녹는점
~1900°
밀도
6,88 g/cm3
굴절률
2.92
물리적 상태
육각형 결정
색상
brown hexagonal, hexane crystals, crystalline
Crystal Structure
Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc
EPA
Indium nitride (InN) (25617-98-5)

안전

WGK 독일 3
기존화학 물질 KE-20991

INDIUM NITRIDE C화학적 특성, 용도, 생산

화학적 성질

-100 mesh with 99.999% purity; wurtzite system, a=0.353 nm, c=0.570 nm; can be prepared by reacting In2O3 with ammonia at high temp; has semiconductor and electroluminescence properties [KIR81] [CIC73] [CER91]

용도

In manufacture of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.

생산 방법

According to Hahn and Juza, InN is prepared by placing 1 g. of finely powdered (NH4)3InF5 in a corundum boat and inserting it into the cold zone of a quartz tube heated by an electric furnace. A fast stream of NH3 (dried over Na) is allowed to flow through the tube. The boat is pulled into the hot zone of the tube when the temperature has reached 630°C. The temperature drops to 580-600°C, and the material is held at this temperature for 15 minutes. The temperature is then decreased over 10 minutes to 520°C and held there for another 10 minutes to quantitatively drive out the byproduct NH4F. Slow heat-up times and longer heating of the (NH4)3lnF6 lead to products low in N.

INDIUM NITRIDE 준비 용품 및 원자재

원자재

준비 용품


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