|
|
| | TETRAKIS(DIETHYLAMINO)ZIRCONIUM Chemical Properties |
| Boiling point | 128 °C/0.05 mmHg (lit.) | | density | 1.026 g/mL at 25 °C (lit.) | | refractive index | n20/D 1.51(lit.) | | Fp | 54 °F | | storage temp. | 2-8°C | | form | liquid | | color | yellow | | Sensitive | Moisture Sensitive |
| Hazard Codes | F,Xi | | Risk Statements | 11-14-36/37/38 | | Safety Statements | 16-26-36 | | RIDADR | UN 3398 4.3/PG 2 | | WGK Germany | 3 | | HazardClass | 4.3 | | PackingGroup | II |
| | TETRAKIS(DIETHYLAMINO)ZIRCONIUM Usage And Synthesis |
| Description | Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method3.
| | Reference |
- Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
- Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
- Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.
| | Uses | Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions. | | General Description | Atomic number of base material: 40 Zirconium |
| | TETRAKIS(DIETHYLAMINO)ZIRCONIUM Preparation Products And Raw materials |
|