Buffered oxide etchant (BOE) 6:1 with surfactant

Buffered oxide etchant (BOE) 6:1 with surfactant Chemische Eigenschaften,Einsatz,Produktion Methoden

Verwenden

Buffered oxide etchant (BOE) 6:1 with surfactant may be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It may also be used in a buffer oxide etchant method for the fabrication of micro biochip.

Allgemeine Beschreibung

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). It is a mixture of a buffering agent, such as ammonium fluoride (NH₄F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

Buffered oxide etchant (BOE) 6:1 with surfactant Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

Buffered oxide etchant (BOE) 6:1 with surfactant Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

Firmenname	Telefon	E-Mail	Land	Produktkatalog	Edge Rate
Aladdin Scientific	+1-+1(833)-552-7181	sales@aladdinsci.com	United States	57511	58
Sigma-Aldrich	021-61415566 800-8193336	orderCN@merckgroup.com	China	51471	80
Shanghai Aladdin Biochemical Technology Co.,Ltd.	+86-18521732826	market@aladdin-e.com	China	48467	58

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• Buffered oxide etchant (BOE) 6:1 with surfactant