ChemicalBook > Product Catalog >Organic Chemistry >Organometallic compounds >Organic hafnium, silver, platinum >HAFNIUM TERT-BUTOXIDE
HAFNIUM TERT-BUTOXIDE
- CAS No.
- 2172-02-3
- Chemical Name:
- HAFNIUM TERT-BUTOXIDE
- Synonyms
- 1.5%-Zr);HAFNIUM T-BUTOXIDE;HAFNIUM TERT-BUTOXIDE;HAFNIUM (IV) T-BUTOXIDE;HAFNIUM TETRA-T-BUTOXIDE;Tetra-tert-butoxyhafnium;Hafnium(IV) tert-butoxide;Hafnium(4+) tert-butoxide;Tetrakis(t-butoxy)hafnium;Hafnium tetra-tert-butoxide
- CBNumber:
- CB5137143
- Molecular Formula:
- C16H36HfO4
- Molecular Weight:
- 470.94
- MOL File:
- 2172-02-3.mol
- MSDS File:
- SDS
- Modify Date:
- 2025/1/27 9:38:02
| Melting point | 2℃ |
|---|---|
| Boiling point | 90 °C5 mm Hg(lit.) |
| Density | 1.166 g/mL at 25 °C(lit.) |
| refractive index |
n |
| Flash point | 83 °F |
| solubility | Soluble in hydrocarbons, reacts with alcohols, ketones, and esters |
| form | Liquid |
| Specific Gravity | 1.166 |
| Hydrolytic Sensitivity | 7: reacts slowly with moisture/water |
| Sensitive | Moisture Sensitive/Light Sensitive |
| Exposure limits |
ACGIH: TWA 0.5 mg/m3 NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3 |
| CAS DataBase Reference | 2172-02-3(CAS DataBase Reference) |
SAFETY
Risk and Safety Statements
| Symbol(GHS) |   GHS02,GHS07 |
|||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Signal word | Warning | |||||||||
| Hazard statements | H226-H315-H319-H335 | |||||||||
| Precautionary statements | P210-P302+P352-P305+P351+P338 | |||||||||
| Hazard Codes | Xi | |||||||||
| Risk Statements | 10-36/37/38 | |||||||||
| Safety Statements | 16-26 | |||||||||
| RIDADR | UN 1993 3/PG 3 | |||||||||
| WGK Germany | 3 | |||||||||
| TSCA | No | |||||||||
| HazardClass | 3 | |||||||||
| PackingGroup | II | |||||||||
| HS Code | 2905190019 | |||||||||
| NFPA 704 |
|
HAFNIUM TERT-BUTOXIDE price More Price(3)
| Manufacturer | Product number | Product description | CAS number | Packaging | Price | Updated | Buy |
|---|---|---|---|---|---|---|---|
| Sigma-Aldrich(India) | 760463 | Hafnium(IV) tert-butoxide packaged for use in deposition systems | 2172-02-3 | 10G | ₹76965.75 | 2022-06-14 | Buy |
| Sigma-Aldrich(India) | 445541 | Hafnium(IV) tert-butoxide 99.99% trace metals basis (purity excludes ~2000 ppm zirconium.) | 2172-02-3 | 5G | ₹23468.6 | 2022-06-14 | Buy |
| ottokemi | H 3124 | Hafnium tert-butoxide 99.99% | 2172-02-3 | 5gm | ₹23049 | 2022-05-26 | Buy |
HAFNIUM TERT-BUTOXIDE Chemical Properties,Uses,Production
Uses
Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.
General Description
Atomic number of base material: 72 Hafnium
HAFNIUM TERT-BUTOXIDE Preparation Products And Raw materials
Raw materials
Preparation Products
Global( 60)Suppliers
| Supplier | Tel | Country | ProdList | Advantage | Inquiry |
|---|---|---|---|---|---|
| Otto Chemie Pvt. Ltd. | +91 9820041841 | Mumbai, India | 5870 | 58 | Inquiry |
| Hebei Chuanghai Biotechnology Co., Ltd | +8615531151365 | China | 18137 | 58 | Inquiry |
| Hebei Yanxi Chemical Co., Ltd. | +8617531153977 | China | 5854 | 58 | Inquiry |
| Hefei TNJ Chemical Industry Co.,Ltd. | +86-0551-65418671 +8618949823763 | China | 34563 | 58 | Inquiry |
| Shaanxi Dideu Medichem Co. Ltd | +86-029-89586680 +86-18192503167 | China | 7859 | 58 | Inquiry |
| Aladdin Scientific | United States | 52924 | 58 | Inquiry | |
| XIAMEN AMITY INDUSTRY AND TRADE CO., LTD. | +8618950047208 | China | 43416 | 58 | Inquiry |
| DAYANG CHEM (HANGZHOU) CO.,LTD | +8617705817739 | China | 53881 | 58 | Inquiry |
| ABCR GmbH & CO. KG | 49 721 95061 0 | Germany | 6831 | 75 | Inquiry |
| ProChem, Inc. | 815 398 1788 | United States | 1691 | 66 | Inquiry |
2172-02-3(HAFNIUM TERT-BUTOXIDE)Related Search:
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HAFNIUM T-BUTOXIDE
HAFNIUM TERT-BUTOXIDE
HAFNIUM TETRA-T-BUTOXIDE
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HAFNIUM TERT-BUTOXIDE ISO 9001：2015 REACH
Hafnium tert-butoxide, 99.99%
Hafnium(IV) tert-butoxide
2172-02-3
2172-2-3
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4C4H9OHf
metal alkoxide
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Micro/Nanoelectronics
Solution Deposition Precursors