INDIUM NITRIDE
- CAS No.
- 25617-98-5
- Chemical Name:
- INDIUM NITRIDE
- Synonyms
- INDIUM NITRIDE;Nitriloindium(III);Indium mononitride;indiumnitride(inn);azanylidyneindigane;INDIUM(III) NITRIDE;IndiuM nitride (III);INDIUM(III) NITRIDE, 99.9%;INDIUM NITRIDE ISO 9001：2015 REACH;Indium nitride, 99.8% (metals basis)
- CBNumber:
- CB5665547
- Molecular Formula:
- InN
- Molecular Weight:
- 128.82
- MOL File:
- 25617-98-5.mol
- MSDS File:
- SDS
- Modify Date:
- 2024/7/8 15:29:32
| Melting point | ~1900° |
|---|---|
| Density | 6,88 g/cm3 |
| refractive index | 2.92 |
| form | hexagonal crystals |
| color | brown hexagonal, hexane crystals, crystalline |
| Crystal Structure | Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc |
| EPA Substance Registry System | Indium nitride (InN) (25617-98-5) |
INDIUM NITRIDE price More Price(2)
| Manufacturer | Product number | Product description | CAS number | Packaging | Price | Updated | Buy |
|---|---|---|---|---|---|---|---|
| Sigma-Aldrich(India) | 490628 | Indium(III) nitride 99.9% trace metals basis | 25617-98-5 | 1G | ₹18088.58 | 2022-06-14 | Buy |
| Sigma-Aldrich(India) | 490628 | Indium(III) nitride 99.9% trace metals basis | 25617-98-5 | 5G | ₹59992.15 | 2022-06-14 | Buy |
INDIUM NITRIDE Chemical Properties,Uses,Production
Chemical Properties
-100 mesh with 99.999% purity; wurtzite system, a=0.353 nm, c=0.570 nm; can be prepared by reacting In2O3 with ammonia at high temp; has semiconductor and electroluminescence properties [KIR81] [CIC73] [CER91]
Uses
In manufacture of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.
Production Methods
According to Hahn and Juza, InN is prepared by placing 1 g. of finely powdered (NH4)3InF5 in a corundum boat and inserting it into the cold zone of a quartz tube heated by an electric furnace. A fast stream of NH3 (dried over Na) is allowed to flow through the tube. The boat is pulled into the hot zone of the tube when the temperature has reached 630°C. The temperature drops to 580-600°C, and the material is held at this temperature for 15 minutes. The temperature is then decreased over 10 minutes to 520°C and held there for another 10 minutes to quantitatively drive out the byproduct NH4F. Slow heat-up times and longer heating of the (NH4)3lnF6 lead to products low in N.
INDIUM NITRIDE Preparation Products And Raw materials
Raw materials
Preparation Products
| Supplier | Tel | Country | ProdList | Advantage | Inquiry |
|---|---|---|---|---|---|
| career henan chemical co | +86-0371-86658258 +8613203830695 | China | 29897 | 58 | Inquiry |
| Chongqing Chemdad Co., Ltd | +86-023-6139-8061 +86-86-13650506873 | China | 39916 | 58 | Inquiry |
| Henan Alfa Chemical Co., Ltd | +8618339805032 | China | 13141 | 58 | Inquiry |
| changzhou huayang technology co., ltd | +8615250961469 | China | 9827 | 58 | Inquiry |
| Alfa Chemistry | United States | 24072 | 58 | Inquiry | |
| Shaanxi Didu New Materials Co. Ltd | +86-89586680 +86-13289823923 | China | 9003 | 58 | Inquiry |
| Shanghai kadel chemical technology co., LTD | 021-4007787-550 400-7787-550 | China | 10599 | 58 | Inquiry |
| Shandong Xiya Chemical Co., Ltd. | 4009903999 13395398332 | China | 20810 | 60 | Inquiry |
| Shaanxi Xihua Chemical Industry Co., Ltd | 17691182729 15529505138 | China | 9964 | 58 | Inquiry |
| Qiyuan (Guangdong) Pharmaceutical Chemical Co., Ltd. | 400-666-9280 18026564465 | China | 8009 | 58 | Inquiry |
Related articles
- Indium Nitride (InN): Heteroepitaxial Growth on Lattice Mismatched Substrates
- Nitride thin films occur commonly in two different phases. This article will discuss the unit cell of indium nitride (InN) for....
- Apr 8，2024