Фосфида галлия
Фосфида галлия атрибут
| Температура плавления: |
1480 °C |
| плотность: |
4.13 g/mL at 25 °C |
| показатель преломления: |
2.9 |
| Fp: |
230 °F |
| форма: |
Твердый |
| Удельный вес: |
4.1 |
| цвет: |
Бледно-оранжевый |
| удельное сопротивление: |
~0.3 Ω-cm |
| Растворимость в воде: |
Нерастворим в воде. |
| Кристальная структура: |
Cubic, Sphalerite Structure - Space Group F(-4)3m |
| Мерк: |
14,4353 |
| Справочник по базе данных CAS: |
12063-98-8(CAS DataBase Reference) |
| Рейтинг продуктов питания EWG: |
1 |
| FDA UNII: |
3J421F73DV |
| Система регистрации веществ EPA: |
Gallium phosphide (GaP) (12063-98-8) |
Фосфида галлия химические свойства, назначение, производство
Химические свойства
Pale-orange, transparent crystals or
whiskers up to 2 cmlong, made by vapor phase reaction
at relatively low temperatures between phosphorus
and gallium suboxide. These crystals are
intermediate between normal semiconductors and
insulators or phosphors. They operate over a temperature
range of ?55 to 500C. Gallium phosphide
is electroluminescent in visible light.
Физические свойства
Pale orange to yellow transparent cubic crystals or long whiskers; density 4.138 g/cm3; melts at 1,477°C; dielectric constant 8.4; electroluminescent in visible light.
The transmittance rises steeply at λ: 0.55 mm to reach about 20% until λ: 1 mm and decreases for
the longer wavelength until it is opaque at λ: 3 mm.
This crystal has a spectral feature where the reflectance takes high values in its entire range, and
almost 100% especially at the peak value of λ: 26.56 mm.
Использование
Gallium phosphide (GaP) is used in semiconductor devices, and in the manufacture of light-emitting diodes (LEDs) doped with other elements or in combination with gallium arsenide phosphide. With appropriate dopants, p-type and n-type semiconductors can be produced. It is used in optical systems.
Подготовка
The compound is prepared by vapor phase reaction of gallium suboxide, Ga2O and phosphorus. It is produced in polycrystalline form or as single crystals or whiskers in high purity grade for use in semiconducting devices.
Структура и конформация
The space lattice of gallium phosphide (GaP) belongs to the cubic system, and its zinc-blende-type
structure has a lattice constant of a=0.544 nm and GaP=0.236 nm.
Фосфида галлия препаратная продукция и сырье
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