BIS(TERT-BUTYLIMINO)BIS(DIMETHYLAMINO)&
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- ₹43765.48 - ₹71878
- Product name: BIS(TERT-BUTYLIMINO)BIS(DIMETHYLAMINO)&
- CAS: 406462-43-9
- MF: C12H30N4W
- MW: 414.24
- EINECS:
- MDL Number:MFCD07369712
- Synonyms:Bis(t-butyliMido)bis(diMethylaMido)tungsten(VI), Min. 97% BTBMW;Bis(tert-butyliMino)bis(diMethylaMino)tungsten(VI) 97%, 99.99% trace Metals basis;BIS(TERT-BUTYLIMINO)BIS(DIMETHYLAMINO)&;BIS(TERT-BUTYLIMINO)BIS(DIMETHYLAMINO)TUNGSTEN(VI), FOR CAMBRIDGE NANOTECH INC.;BTBMW;Bis(tert-butylimino)bis(dimethylamino)tungsten(VI) packaged for use in deposition systems;BIS(T-BUTYLIMIDO)BIS(DIMETHYLAMINO)TUNGSTEN(VI),MIN.97%BTBMW;bis(tert-butylimino)tungsten,dimethylazanide
2 prices
Selected condition:
Brand
- Sigma-Aldrich(India)
Package
- 5G
- 10G
- ManufacturerSigma-Aldrich(India)
- Product number577936
- Product descriptionBis(tert-butylimino)bis(dimethylamino)tungsten(VI) 97%, 99.99% trace metals basis
- Packaging5G
- Price₹43765.48
- Updated2022-06-14
- Buy
- ManufacturerSigma-Aldrich(India)
- Product number668885
- Product descriptionBis(tert-butylimino)bis(dimethylamino)tungsten(VI) packaged for use in deposition systems
- Packaging10G
- Price₹71878
- Updated2022-06-14
- Buy
Manufacturer | Product number | Product description | Packaging | Price | Updated | Buy |
---|---|---|---|---|---|---|
Sigma-Aldrich(India) | 577936 | Bis(tert-butylimino)bis(dimethylamino)tungsten(VI) 97%, 99.99% trace metals basis | 5G | ₹43765.48 | 2022-06-14 | Buy |
Sigma-Aldrich(India) | 668885 | Bis(tert-butylimino)bis(dimethylamino)tungsten(VI) packaged for use in deposition systems | 10G | ₹71878 | 2022-06-14 | Buy |
Properties
Boiling point :81 °C0.02 mm Hg(lit.)
Density :1.305 g/mL at 25 °C(lit.)
Flash point :57 °F
form :liquid
color :yellow
Sensitive :air sensitive, moisture sensitive
CAS DataBase Reference :406462-43-9
Density :1.305 g/mL at 25 °C(lit.)
Flash point :57 °F
form :liquid
color :yellow
Sensitive :air sensitive, moisture sensitive
CAS DataBase Reference :406462-43-9
Safety Information
Symbol(GHS): |
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Signal word: | Danger | |||||||||||||||||||||
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Description
Precursor for the deposition of tungsten carbide and -nitride by atomic layer deposition.More related product prices
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