Silicon Tetrafluoride
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- Product name: Silicon Tetrafluoride
- CAS: 7783-61-1
- MF: F4Si
- MW: 104.08
- EINECS:232-015-5
- MDL Number:MFCD00040533
- Synonyms:SILICON TETRAFLUORIDE;SILICIUM TETRAFLUORIDE;Silicon fluoride;SILICON (IV) FLUORIDE;TETRAFLUOROSILANE;SILICON TETRAFLUORIDE, 99.99+%, ELECTRON;Silicon tetrafluoride 99.5%;TETRAFLUOROSILANE: 99.99%
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Properties
Melting point :-90°C
Boiling point :-86 °C
Density :1.66
vapor pressure :3517.191kPa at 25℃
solubility :reacts with H2O
form :colorless gas
color :colorless
Specific Gravity :1.66
Water Solubility :hydrolyzed by H2O [AIR87]
Hydrolytic Sensitivity :8: reacts rapidly with moisture, water, protic solvents
Merck :13,8575
CAS DataBase Reference :7783-61-1(CAS DataBase Reference)
EPA Substance Registry System :Silane, tetrafluoro- (7783-61-1)
Boiling point :-86 °C
Density :1.66
vapor pressure :3517.191kPa at 25℃
solubility :reacts with H2O
form :colorless gas
color :colorless
Specific Gravity :1.66
Water Solubility :hydrolyzed by H2O [AIR87]
Hydrolytic Sensitivity :8: reacts rapidly with moisture, water, protic solvents
Merck :13,8575
CAS DataBase Reference :7783-61-1(CAS DataBase Reference)
EPA Substance Registry System :Silane, tetrafluoro- (7783-61-1)
Safety Information
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Signal word: | Danger | ||||||||||||||
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Description
Silicon tetrafluoride is used in ion-implantation processes and as a precursor to fluorinated silica via plasma-assisted CVD. Mixtures of SiF4-SiH4-H2have recently been used to deposit polycrystalline silicon thin films via remote plasma chemical vapor deposition (RPCVD).Such fluorinated thin films show visible photoluminescence (PL) at room temperature.More related product prices
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