BISMUTH TELLURIDE
![BISMUTH TELLURIDE Structure](CAS/GIF/1304-82-1.gif)
- CAS No.
- 1304-82-1
- Chemical Name:
- BISMUTH TELLURIDE
- Synonyms
- Bi2Te3 Crystal;Einecs 215-135-2;BisMuth PURATREM;tellurobismuthite;BISMUTH TELLURIDE;tellururedebismuth;bismuthtritelluride;Bismuth(3 ) telluride;bismuthsesquitelluride;dibismuth tritelluride
- CBNumber:
- CB1153118
- Molecular Formula:
- Bi2Te3
- Molecular Weight:
- 800.76
- MOL File:
- 1304-82-1.mol
- MSDS File:
- SDS
- Modify Date:
- 2024/8/21 22:41:43
Melting point | 585 °C(lit.) |
---|---|
Boiling point | 1172 °C |
Density | 7.642 g/mL at 25 °C(lit.) |
solubility | insoluble in H2O; soluble in ethanol |
form | Powder |
color | Gray |
Water Solubility | Insoluble in water. |
Sensitive | Moisture Sensitive |
Crystal Structure | Cubic, Halite Structure - Space Group Fm3m |
Exposure limits |
ACGIH: TWA 10 mg/m3; TWA 5 mg/m3; TWA 0.1 mg/m3 OSHA: TWA 15 mg/m3; TWA 5 mg/m3 NIOSH: IDLH 25 mg/m3; TWA 5 mg/m3; TWA 10 mg/m3; TWA 0.1 mg/m3 |
InChIKey | GUYIRKJSQUOSJV-UHFFFAOYSA-N |
CAS DataBase Reference | 1304-82-1(CAS DataBase Reference) |
EPA Substance Registry System | Dibismuth tritelluride (1304-82-1) |
Hardness, Mohs | 1.8 |
---|---|
Knoop Microhardness | 155, N/mm2 |
SAFETY
Risk and Safety Statements
Symbol(GHS) | ![]() GHS07 |
|||||||||
---|---|---|---|---|---|---|---|---|---|---|
Signal word | Warning | |||||||||
Hazard statements | H302+H312+H332-H315-H319-H335 | |||||||||
Precautionary statements | P261-P280-P301+P312-P302+P352+P312-P304+P340+P312-P305+P351+P338 | |||||||||
Hazard Codes | Xn | |||||||||
Risk Statements | 20/21/22-36/37/38 | |||||||||
Safety Statements | 26-36 | |||||||||
RIDADR | UN 3284 6.1/PG 3 | |||||||||
OEB | B | |||||||||
OEL | TWA: 10 mg/m3 (total) | |||||||||
WGK Germany | 3 | |||||||||
RTECS | EB3110000 | |||||||||
TSCA | Yes | |||||||||
HazardClass | 6.1 | |||||||||
NFPA 704 |
|
BISMUTH TELLURIDE price More Price(9)
Manufacturer | Product number | Product description | CAS number | Packaging | Price | Updated | Buy |
---|---|---|---|---|---|---|---|
Sigma-Aldrich(India) | 733482 | Bismuth(III) telluride powder, ?325?mesh, 99.99% trace metals basis | 1304-82-1 | 5G | ₹8324.43 | 2022-06-14 | Buy |
ALFA India | ALF-044077-22 | Bismuth(III) telluride, 99.98% (metals basis) | 1304-82-1 | 100g | ₹46734 | 2022-05-26 | Buy |
ALFA India | ALF-044077-14 | Bismuth(III) telluride, 99.98% (metals basis) | 1304-82-1 | 25g | ₹11416 | 2022-05-26 | Buy |
ALFA India | ALF-044077-06 | Bismuth(III) telluride, 99.98% (metals basis) | 1304-82-1 | 5g | ₹5514 | 2022-05-26 | Buy |
ALFA India | ALF-014519-18 | Bismuth(III) telluride, Vacuum Deposition Grade, 99.999% (metals basis) | 1304-82-1 | 50g | ₹21464 | 2022-05-26 | Buy |
BISMUTH TELLURIDE Chemical Properties,Uses,Production
Chemical Properties
Bismuth telluride is a gray or black crystalline solid or gray powder.
Uses
Bi2Te3, along with Sb2Te3 and other structurally analogous semiconductors, is widely regarded as one of the best materials for room-temperature thermoelectric devices. Bismuth(III) telluride is a key component of thermoelectric materials that have reached ZT values as high as 2.4 at room temperature.
General Description
Gray or black hexagonal platelets with a metallic luster or gray powder. Mp: 586°C. Density: 7.8 g cm-3. An alloy of two metallic elements.
Reactivity Profile
BISMUTH TELLURIDE may emit toxic fumes of tellurium when heated to decomposition. Incompatible with strong oxidizing agents such as nitric acid or bromine, chlorine or fluorine. Moderate fire hazard by reaction with such materials. May react with strong acids to evolve toxic gases; may react slowly with water to evolve toxic gases. Slight explosion hazard with moisture.
Hazard
Toxic.
Health Hazard
Bismuth telluride, either alone
or doped with selenium sulfide, is apparently of
very low toxicity.
In limited industrial experimental work
with bismuth telluride under controlled conditions
(vacuum hoods), no adverse health
effects were encountered other than tellurium
breath.
Potential Exposure
Bismuth telluride is used in thermoelectric cooling, power generation, semiconductor manufacture; pharmaceuticals; medical therapy; cosmetics. Exposure involves those working in “Silicon Valley” and similar locations around the world. An alloy of two metallic elements that are sometimes doped with SeS. The SeS dopant alters the electrical properties, but has too low a concentration to affect the chemical properties.
Shipping
UN3284 Tellurium compound, n.o.s., Hazard Class: 6.1; Labels: 6.1—Poisonous materials, Technical Name Required.
Incompatibilities
Reacts with acids forming toxic gases. Incompatible with oxidizers (chlorates, nitrates, peroxides, permanganates, perchlorates, chlorine, bromine, fluorine, etc.); contact may cause fires or explosions. Keep away from alkaline materials, strong bases, strong acids, oxoacids, epoxides. Toxic and flammable gas may slowly evolve from contact with moisture.
BISMUTH TELLURIDE Preparation Products And Raw materials
Raw materials
Preparation Products
Supplier | Tel | Country | ProdList | Advantage | Inquiry |
---|---|---|---|---|---|
Otto Chemie Pvt. Ltd. | +91 9820041841 | Mumbai, India | 5873 | 58 | Inquiry |
Alfa Aesar | 1 800 209 7001 | Maharashtra, India | 6913 | 58 | Inquiry |
Aritech Chemazone Private Limited | +91-9034345475 | Punjab, India | 684 | 58 | Inquiry |
Shaanxi Dideu Medichem Co. Ltd | +86-29-81148696 +86-15536356810 | China | 3878 | 58 | Inquiry |
Hebei Chuanghai Biotechnology Co,.LTD | +86-13131129325 | China | 5867 | 58 | Inquiry |
Shanghai Daken Advanced Materials Co.,Ltd | +86-371-66670886 | China | 18648 | 58 | Inquiry |
Henan Tianfu Chemical Co.,Ltd. | +86-0371-55170693 +86-19937530512 | China | 21667 | 55 | Inquiry |
career henan chemical co | +86-0371-86658258 +8613203830695 | China | 29888 | 58 | Inquiry |
Chongqing Chemdad Co., Ltd | +86-023-6139-8061 +86-86-13650506873 | China | 39916 | 58 | Inquiry |
Shaanxi Dideu Medichem Co. Ltd | +86-029-89586680 +86-18192503167 | China | 8744 | 58 | Inquiry |
Related articles
- Crystal structure and Uses of Bismuth telluride
- Bismuth telluride is a narrow-gap layered semiconductor with a trigonal unit cell.
- Mar 26,2024
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