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ChemicalBook > Product Catalogue >Organic Chemistry >Hydrocarbons and derivatives >Cyclic hydrocarbons >Octafluorocyclobutane

Octafluorocyclobutane

Octafluorocyclobutane Structure
  • ₹0
  • Product name: Octafluorocyclobutane
  • CAS: 115-25-3
  • MF: C4F8
  • MW: 200.03
  • EINECS:204-075-2
  • MDL Number:MFCD00040334
  • Synonyms:OCTAFLUOROCYCLOBUTANE;PERFLUOROCYCLOBUTANE;Perfiuorocyclobutane;PFC C-318;1,1,2,2,3,3,4,4-Octafluorocyclobutane;C318 ;Cyclobutane, octafluoro-;cyclobutane,octafluoro-
Manufacturer Product number Product description Packaging Price Updated Buy

Properties

Melting point :-41.4 °C
Boiling point :-6 °C
Density :1,48 g/cm3
refractive index :1.217
LogP :1.97
CAS DataBase Reference :115-25-3(CAS DataBase Reference)
NIST Chemistry Reference :Octafluorocyclobutane(115-25-3)
EPA Substance Registry System :Perfluorocyclobutane (115-25-3)

Safety Information

Symbol(GHS): GHS hazard pictograms
Signal word: Warning
Hazard statements:
Code Hazard statements Hazard class Category Signal word Pictogram P-Codes
H280 Contains gas under pressure; may explode if heated Gases under pressure Compressed gas
Liquefied gas
Dissolved gas
Warning GHS hazard pictograms P410+P403
H315 Causes skin irritation Skin corrosion/irritation Category 2 Warning GHS hazard pictograms P264, P280, P302+P352, P321,P332+P313, P362
H319 Causes serious eye irritation Serious eye damage/eye irritation Category 2A Warning GHS hazard pictograms P264, P280, P305+P351+P338,P337+P313P
H335 May cause respiratory irritation Specific target organ toxicity, single exposure;Respiratory tract irritation Category 3 Warning GHS hazard pictograms
Precautionary statements:
P261 Avoid breathing dust/fume/gas/mist/vapours/spray.
P271 Use only outdoors or in a well-ventilated area.
P280 Wear protective gloves/protective clothing/eye protection/face protection.

Description

Refrigerant; heat-transfer medium.
Halocarbon 318 is used for plasma etching. When it is exposed to the RF field generated in the etching process, a gas plasma is produced that will etch silicon compounds with excellent selectivity.

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